Semiconductor substrate and method for manufacturing semiconduct

Details Semiconductor substrate and method for manufacturing semiconduct Semiconductor substrate and method for manufacturing semiconduct

1983-02-08

1986-07-01

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576T, 148 15, 148 332, 148DIG60, 148DIG66, H01L 21322, H01L 21461

Patent

active

045971668

ABSTRACT:
A semiconductor substrate has a semiconductor substrate main body having a first major surface and a second major surface opposite thereto. At least one recess is formed in the second major surface. The recess defines a semiconductor element formation region between a bottom surface thereof and the first major surface of the substrate main body. Gettering of contaminant impurities such as heavy metals can be effectively performed at the rear surface of the substrate after the formation of a semiconductor element in the element formation region.

REFERENCES:
patent: 3757414 (1973-09-01), Keller
patent: 3767494 (1973-10-01), Muraoka
patent: 4144099 (1979-03-01), Edmonds et al.
patent: 4191788 (1980-03-01), Harrington
patent: 4372803 (1983-02-01), Gigante
patent: 4400869 (1983-08-01), Wilner et al.
Nagasaki et al., "Gettering Technique and Structure", IBM Technical Disclosure Bulletin, vol. 17, No. 12, May 75.
Miersch, "Natural LSI Process Step to Create Controllable Boiling Centers," IBM Technical Disclosure Bulletin, vol. 18, No. 2, Jul. 1975.
Mets, Poisoning and Gettering Effects in Silicon Junctions," Journal of the Electrochemical Society, Apr., 1965.

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