Method of manufacturing SiO.sub.2 -Si interface for floating gat

Details Method of manufacturing SiO.sub.2 -Si interface for floating gat Method of manufacturing SiO.sub.2 -Si interface for floating gat

1985-02-27

1986-07-01

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576T, 148DIG53, 148DIG138, 148DIG169, 357 238, 204192D, 427 99, H01L 2102, H01L 2134, H01L 2176, H01L 2194

Patent

active

045971595

ABSTRACT:
A semiconductor device is manufactured by forming a first insulating film on a surface of a semiconductor substrate of a first conductivity type, and a first nonmonocrystalline silicon film is formed on the first insulating film. A second insulating film is deposited on the first nonmonocrystalline silicon film by CVD, sputtering or molecular beam method. An impurity is then ion-implanted in the first nonmonocrystalline silicon film through the second insulating film. The second insulating film is then removed to expose the surface of the first nonmonocrystalline silicon film doped with the impurity, and a thermal oxide film is formed on the exposed portion of the first nonmonocrystalline silicon film. Subsequently, a second nonmonocrystalline silicon film is formed on the thermal oxide film, and a third insulating film is formed on the second nonmonocrystalline silicon film.

REFERENCES:
Wada et al., "Grain Growth Mechanism of Heavily Phosphorus-Implanted Polycrystalline Silicon," Journal of Electrochemical Society, vol. 125 No. 9, pp. 1499-1504, 1978.
Faraone, "An Improved Fabrication Process for Multi-Level Polysilicon Structures," Journal of Electrochemical Society, IEEE Electron Devices Society, 1983 Symposium on VLSI Technology, Digest of Technical Papers, pp. 110-111, Sep. 12-15, 1983.
Anderson et al, "Evidence for Surface Asperity Mechanism of Conductivity in Oxide Grown on Polycrystalline Silicon", J. of Appl. Phys., 48(11), 11/77, pp. 4834-4836.
Huff, "Experimental Observations on Conductance Through Polysilicon Oxide", J. Electrochem. Soc., 127(11), pp. 3482-3488.

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