Majority charge carrier bipolar diode with fully depleted barrie

Details Majority charge carrier bipolar diode with fully depleted barrie Majority charge carrier bipolar diode with fully depleted barrie

1977-03-22

1979-04-10

Clawson, Jr., Joseph E.

357 15, 357 34, 357 90, 357 91, H01L 2990

Patent

active

041491742

ABSTRACT:
A majority charge carrier diode structure in which current flow between two regions of the same conductivity type is controlled by the number of compensating impurities implanted to form between the two regions a narrow, fully-depleted barrier region which presents a potential barrier to each region. The device can be used as a discrete diode or as part of a device e.g. the collector junction of a transistor.

REFERENCES:
patent: 3488527 (1970-01-01), Ruegg
patent: 3615929 (1971-10-01), Portnoy et al.
patent: 3814993 (1974-06-01), Kennedy
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 3940783 (1976-02-01), Polata
patent: 3943552 (1976-03-01), Shannon et al.
patent: 3964084 (1976-06-01), Andrews et al.

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