Semiconductor device having a barrier film formed to prevent the

Details Semiconductor device having a barrier film formed to prevent the Semiconductor device having a barrier film formed to prevent the

1997-06-13

2000-01-04

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257640, H01L 23532

Patent

active

060113081

ABSTRACT:
A semiconductor device includes a silicon substrate, a first insulating film, a barrier film, a contact hole, a protective film, a barrier metal, and an interconnection metal. A semiconductor element is formed on the silicon substrate. The first insulating film is formed on the silicon substrate. The barrier film is formed on the first insulating film to prevent moisture from externally entering. The contact hole is formed through the barrier film and the insulating film to a depth at which the silicon substrate is exposed. The protective film is formed on the side surface of the contact hole to protect the first insulating film against etching which is performed to remove a spontaneous oxide film formed on a surface of the silicon substrate which is exposed on a bottom surface of the contact hole. The barrier metal is continuously formed on at least the side and bottom surfaces of the contact hole and serves as a buffer conductor. The interconnection metal is buried in the contact hole on which the barrier metal is formed. A semiconductor device manufacturing method is also disclosed.

REFERENCES:
patent: 4962414 (1990-10-01), Liou et al.
"Secondary slow trapping--A new moisture induced instability phenomenon in scaled CMOS devices", 20th Ann. Proc. International Reliability Physics Symposium, pp. 113-121, 1982.

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