Active solid-state devices (e.g. – transistors – solid-state diode – With specified shape of pn junction
Patent
1996-12-31
2000-01-04
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
With specified shape of pn junction
257927, H01L 2906
Patent
active
060112980
ABSTRACT:
A semiconductor device structure and method are presented for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region. The structure includes a region of second conductivity type in the substrate completely buried in the substrate below and separated from the device region. The region of second conductivity type is located a predetermined distance away from the device region. The distance is sufficient to permit a depletion region to form between the region of second conductivity type and the device region, when a first voltage is applied between the device region and the substrate. The distance also is determined to produce a radius of curvature of the depletion region, when a second voltage that is larger than the first voltage is applied between the device region and the substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if the region of second conductivity type were not present. Traditional field shaping regions spaced from the device region at a surface of the substrate and spaced from the region of second conductivity type may be used in conjunction with the buried ring, if desired.
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Antognetti, Power Integrated Circuits: Physics, Design, and Applications, McGraw hill, 1986, pp. 3.1-3.58.
A. Blicher, Field-Effect and Bipolar Power Transistor Physics, Academic Press, pp. 53-84, 1981.
Galanthay Theodore E.
Hardy David B.
Jorgenson Lisa K.
McCutcheon Robert D.
STMicroelectronics Inc.
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