Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1997-10-28

2000-01-04

Picardat, Kevin M.

Semiconductor device manufacturing: process

With measuring or testing

438 16, 438 18, G01R 3126, H01L 2166

Patent

active

060109149

ABSTRACT:
A method for manufacturing a semiconductor device comprises the steps of forming consecutively a silicon oxide layer and a test epitaxial layer in a test pattern area on a silicon wafer, forming an epitaxial layer in a product area for semiconductor devices and on the test epitaxial layer simultaneously, measuring a total thickness of the epitaxial layer and the test epitaxial layer formed in the test pattern area by infrared interference, and determining the thickness of the epitaxial layer formed in the product area based on the total thickness to control the thickness of the epitaxial layer in the product area. A thickness control for a very thin epitaxial layer can be obtained.

REFERENCES:
patent: 5477325 (1995-12-01), Miyashita et al.
patent: 5563448 (1996-10-01), Lee et al.
patent: 5611855 (1997-03-01), Wijaranakula
patent: 5863807 (1999-01-01), Jang et al.
"Semiconductor Crystal Material General Handbook", issued by K. K. Fuji Techno-system, pp. 574-575, Jun. 20, 1986.

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