Pattern fabrication method using a charged particle beam and app

Details Pattern fabrication method using a charged particle beam and app Pattern fabrication method using a charged particle beam and app

1991-01-29

1992-09-22

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37304

Patent

active

051499754

ABSTRACT:
The present application relates to a method and an apparatus for forming a pattern, in which a plane on which a pattern on a sample is traced is decomposed into predetermined partial regions; the pattern density in each of the partial regions is stored in data storing means as pattern density map data; and the irradiation energy amount of a charged particle beam is corrected on the basis of the pattern density map data to correct shortage and excess in the exposure dose due to roughness and fineness of the the pattern, i.e. the proximity effect. Further, the present application relates to a method and an apparatus for forming a pattern, in which when one or a plurality of layers located under the layer on which the pattern should be formed have patterns, influences of the underlayers on the proximity effect are taken into account.

REFERENCES:
patent: 4950910 (1990-08-01), Yasuda et al.
JP-A-58-32420 Feb. 1983, (only abstract).
JP-A-59-139625 Aug. 1984 (only abstract).
JP-A-61-284921 Dec. 1986 (only abstract).
J. Vac. Technol. B3(1), Jan./Feb. 1985 pp. 165-173.
J. Vac. Technol. B7(6), Nov./Dec. 1989 pp. 1524-1527.
J. Appl. Phys. 54(6) Jun. 1983 pp. 3573-3581.
"Variable Spot Shaping for Electron-Beam Lithography" H. C. Pfeiffer 14th Symposium on Electron pp. 887-890.

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