Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1997-02-18
2000-09-19
Chapman, Mark
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
216 12, G03F 900
Patent
active
061209422
ABSTRACT:
A photomask for manufacturing a semiconductor device. The photomask is manufactured by a providing a photomask substrate and alternately depositing a plurality of layers of a light-absorbing material and of an etch-stop material on the photomask substrate. The light-absorbing material is selected as having a well-defined etching selectivity from that of the etch-stop material. The layers are successively patterned by removing by a selective etching process at least a portion of at least one of said layers, the portion removed from a lower, in relation to the substrate, layer a subset of the portion removed from a higher layer. Together, the patterned layers are used as a photomask to photolithographically imprint a pattern of a photoresist on a semiconductor wafer under manufacture. The photoresist is used in the etching process of the semiconductor wafer.
REFERENCES:
patent: 5246799 (1993-09-01), Pierrat
patent: 5465859 (1995-11-01), Chapple-Sokol et al.
patent: 5536604 (1996-07-01), Ito
patent: 5667700 (1997-09-01), Rudigier et al.
patent: 5725973 (1998-03-01), Han et al.
Csepregi et al., "Fabrication of Silicon Oxynitride Masks for X-Ray Lithography", J. Vac. Sci. Technol. vol. 16 No. 6, Nov./Dec. 1979.
A.K. Pfau et al., "Exploration of Fabrication Techniques for Phase-Shifting Masks," SPIE, vol. 1463, Mar. 6-8, 1991, pp. 124-134. (Abstract also attached).
Burn J. Lin, "The Attenuated Phase-Shifting Mask," Solid State Technology, vol. 35, No. 1, Jan. 1992, pp. 43-47. (Abstract also attached).
Alessandro Callegari et al., "Optical properties of hydrogenated amorphous-carbon film for attenuated phase-shift mask applications," Journal of Vacuum Science & Technology B, Second Series, vol. 11, No. 6, Nov./Dec. 1993, pp. 2697-2699. (Abstract also attached).
Chapman Mark
Micro)n Technology, Inc.
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