Methods of forming refractory metal silicide components and meth

Details Methods of forming refractory metal silicide components and meth Methods of forming refractory metal silicide components and meth

1998-02-04

2000-09-19

Jones, Deborah

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428450, 428472, 428698, 428699, 257751, 257915, B32B 1500, B32B 1800, B32B 1504

Patent

active

061209155

ABSTRACT:
Methods of forming refractory metal silicide components are described. In accordance with one implementation, a refractory metal layer is formed over a substrate. A silicon-containing structure is formed over the refractory metal layer and a silicon diffusion restricting layer is formed over at least some of the silicon-containing structure. The substrate is subsequently annealed at a temperature which is sufficient to cause a reaction between at least some of the refractory metal layer and at least some of the silicon-containing structure to at least partially form a refractory metal silicide component. In accordance with one aspect of the invention, a silicon diffusion restricting layer is formed over or within the refractory metal layer in a step which is common with the forming of the silicon diffusion restricting layer over the silicon-containing structure. In a preferred implementation, the silicon diffusion restricting layers are formed by exposing the substrate to nitridizing conditions which are sufficient to form a nitride-containing layer over the silicon-containing structure, and a refractory metal nitride compound within the refractory metal layer. A preferred refractory metal is titanium.

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A. E. Morgan et al., "Interactions of thin Ti films with Si, SiO.sub.2, Si.sub.3 N.sub.4, and SiO.sub.x N.sub.y under rapid thermal annealing", J. Appl. Phys., vol. 64, No. 1, Jul. 1988, pp. 344-353.

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