Patent
1975-12-22
1977-04-19
James, Andrew J.
357 30, 357 52, 357 54, H01L 2978, H01L 2714, H01L 3100, H01L 2934
Patent
active
040191990
ABSTRACT:
A solid-state charge-coupled photoconductor for image scanning including a p-type substrate having a silicon dioxide layer on the surface thereof with the exception of one or more areas in which an n+ diffusion area is located. A polysilicon gate is located over the silicon dioxide layer and a second silicon dioxide layer is located over the polysilicon layer and the n+ diffusion area except for a portion where a first aluminum contact window is provided which extends through the second silicon dioxide layer to the surface of the n+ diffusion area and where a second aluminum contact window extends through the second polysilicon gate to the surface of the polysilicon gate. The photosensitivity of the device is electronically controlled due to the relatively small n+ layer which is reversed biased with respect to the larger gate area.
REFERENCES:
patent: 3473032 (1969-10-01), LeHovec
patent: 3796928 (1974-03-01), Doo et al.
patent: 3808476 (1974-04-01), McCann
patent: 3816769 (1974-06-01), Crowle
patent: 3877053 (1975-04-01), Kaplit
patent: 3877058 (1975-04-01), Cricchi
patent: 3893151 (1975-07-01), Bosselaar et al.
IBM Technical Disclosure Bulletin; by Jacobus; vol. 14, No. 9, Feb. 1972, p. 2624.
Chamberlain Savvas Georgiou
Heller Lawrence Griffith
Goodwin John J.
International Business Machines - Corporation
James Andrew J.
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