Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1984-11-19
1987-11-10
Louie, Won H.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430269, 430311, 430313, G03F 900
Patent
active
047057297
ABSTRACT:
In the fabrication of integrated circuits, a polymethyl methacrylate film containing a selected dye and exhibiting a strong dependence on light intensity is photobleached to provide an optical mask to pattern an underlying photoresist layer. While the film is photobleached, the underlying photoresist layer is made to be substantially unaffected by the photobleaching process. When the optical mask is realized, it is used to mask the light-sensitive photoresist layer when the photoresist layer is exposed to light. However, the photobleached layer, which is also sensitive to light, is now in turn made to be substantially unaffected by the exposure process. In this manner, the integrity of the optical mask resolution is maintained at its optimum, and densely integrated circuits can be processed and fabricated.
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patent: 4448873 (1984-05-01), Walls et al.
patent: 4515877 (1985-05-01), Barzynski et al.
West, Paul R. and Griffing, Bruce F., "Contrast Enhancement--A Route to Submicron Optical Lithography", Proceedings of SPIE, vol. 394, 1983, pp. 33-38.
Bartlett, K.; Hillis, G.; Chen, M.; Trutna, R.; and Watts, M., "A Two Layer Photoresist Process in a Production Environment",Proceedings of SPIE, vol. 394, 1983, pp. 49-56.
Tai et al., "Submicron Optical Lithography Using an Inorgannic Resist/Polymer Bilevel Scheme,"J. Vac. Sci. Technol., 17(5), 1980, pp. 1169-1176.
Hewlett--Packard Company
Hickman Paul L.
Louie Won H.
Wong Edward Y.
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