Polishing method for semiconductor wafer and polishing pad used

Details Polishing method for semiconductor wafer and polishing pad used Polishing method for semiconductor wafer and polishing pad used

1999-02-12

2000-09-19

Rachuba, M.

Abrading

Abrading process

Glass or stone abrading

451526, 451533, B24B 100

Patent

active

06120353&

ABSTRACT:
In a polishing method for a semiconductor wafer in which polishing slurry is interposed between the semiconductor wafer and a polishing pad and the semiconductor wafer is mirror-polished by a polishing step for planarization, when polishing is conducted using a suede-like foam urethane resin polishing pad having physical properties of low compressibility lower than 9 % and high pore density equal to or higher than about 150 pores/cm.sup.2 as the polishing pad used in the polishing step, a mirror silicon wafer with good surface roughness of 50 bits in haze can be manufactured.

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WPI Abstract, Abstract of Japanese Publication No. JP 22-50776, Oct. 8, 1990.

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