Semiconductor device conduction state detection circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307252T, 307350, 324 64, 324158SC, H03K 1772, G01R 3126

Patent

active

042988101

ABSTRACT:
A circuit for detecting the conductive state of a semiconductor device (e.g., a thyristor) which exhibits a substantial terminal to terminal voltage difference between its conducting and nonconducting states and which utilizes a gating signal to render the device conductive includes a bistable circuit (e.g., a flip-flop) which is placed into a first stable state with the occurrence of the gating signal. A voltage sensing circuit disposed across the semiconductor device is utilized to develop an additional signal which is applied to the bistable circuit to thereby place that latter circuit into its second stable state. The state of the bistable circuit is representative of the conductive state of the semiconductor device.

REFERENCES:
patent: 3728557 (1973-04-01), Pelly et al.
patent: 3793537 (1974-02-01), Stringer

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