Method of fabricating dual cylindrical capacitor

Details Method of fabricating dual cylindrical capacitor Method of fabricating dual cylindrical capacitor

1998-10-23

2000-05-09

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 438740, 438753, H01L 2100

Patent

active

060604018

ABSTRACT:
A method of fabricating a dual cylindrical capacitor. On a substrate having a conductive region, an insulation layer is formed with an opening which exposes the conductive region. A conductive layer is formed over the insulation layer to fill the expose conductive region. A mask is formed to cover a part of the conductive layer aligned over the perimeter of the opening. A part of the conductive layer is removed to form two protrusions on the surface of the remaining conductive layer aligned over the perimeter of the opening. A spacer is formed on each side wall of the protrusions. Using each spacer as a mask, the remaining conductive layer is further removed by self-stop etching process. The spacer is removed, and a dielectric layer is formed to cover the conductive layer. Another conductive layer is formed to cover the dielectric layer.

REFERENCES:
patent: 5668038 (1997-09-01), Huang et al.
patent: 5849624 (1998-12-01), Fazan et al.

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