Method for manufacturing dram capacitor incorporating liquid pha

Details Method for manufacturing dram capacitor incorporating liquid pha Method for manufacturing dram capacitor incorporating liquid pha

1998-04-10

2000-05-09

Fahmy, Wael

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438497, 257306, H01L 2120

Patent

active

060603666

ABSTRACT:
A method for forming a DRAM capacitor comprising the steps of first depositing conductive material over a dielectric layer and into a contact opening already formed in the dielectric layer, then patterning the conductive layer using a photoresist layer. Next, a portion of the photoresist layer is removed to expose a peripheral strip on the upper surface of the conductive layer. Then, a liquid-phase deposition method is used to deposit a silicon oxide layer over the conductive layer and the dielectric layer. Due to the selectivity of liquid-phase deposition method, none of the silicon oxide layer is deposited over the photoresist layer. Hence, after the removal of the photoresist layer, the silicon oxide layer can be used as a mask for patterning the conductive layer again. The patterned conductive layer then becomes the cylindrical-shaped storage electrode of a DRAM capacitor.

REFERENCES:
patent: 5529946 (1996-06-01), Hong
patent: 5733808 (1998-03-01), Tseng
patent: 5780334 (1998-07-01), Lim et al.

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