Methods and arrangements for determining an endpoint for an in-s

Details Methods and arrangements for determining an endpoint for an in-s Methods and arrangements for determining an endpoint for an in-s

1997-09-05

2000-05-09

Dutton, Brian

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

438 16, 216 60, 216 67, 357357, H01L 2100, H01L 2166, G01R 3126, G01B 1102

Patent

active

060603283

ABSTRACT:
An arrangement is provided for collecting, measuring and analyzing at least two specific wavelengths of optical emissions produced while etching a semiconductor wafer in a plasma chamber to determine an optimal endpoint for the etching process. The arrangement includes a sensor for gathering optical emissions, an interface for converting the intensity of optical emissions into corresponding electrical signals, and a controller for determining an optimal endpoint based on the corresponding electrical signals for the two specific wavelengths and other predetermined threshold data.

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