Modification of properties of p-type dopants with other p-type d

Details Modification of properties of p-type dopants with other p-type d Modification of properties of p-type dopants with other p-type d

1986-08-28

1988-05-24

James, Andrew J.

357 90, 357 233, H01L 29167, H01L 2978, H01L 2936

Patent

active

047469641

ABSTRACT:
One p-type dopant is implanted into a substrate to modify the diffusion characteristics of another p-type dopant implanted into the substrate. As an example, gallium is diffused into a p-type region along with boron to confine the diffusion of the boron, and thereby produce smaller device regions in silicon. Along with the confined volume, the resulting regions exhibit electrical activity that is greater than the simple additive behavior of boron and gallium acting alone.

REFERENCES:
patent: 3798079 (1974-03-01), Chu et al.
patent: 4512816 (1985-04-01), Ramde et al.
Takeda et al, IEEE Transactions on Electron Devices, vol. ED-29, No. 4, Apr. 1982.
"Point Defect Generation During Phosphorous Diffusion In Silicon", J. C. C. Tsai et al, Journal for the Electrochemical Society: Solid-State Science and Technology, vol. 134, No. 6, pp. 1508-1518, Jun. 1987.

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