Semiconductor memory having thin film field effect selection tra

Details Semiconductor memory having thin film field effect selection tra Semiconductor memory having thin film field effect selection tra

1995-01-30

1996-08-27

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518533, 36518501, G11C 1134

Patent

active

055507735

ABSTRACT:
The invention relates to a semiconductor memory with a semiconductor body which is provided at a surface with a system of memory elements arranged in rows and columns. For addressing, the surface is provided with a system of mutually adjacent parallel selection lines 4, each coupled at one end to a selection transistor 19 with which the connection between the selection line and peripheral electronics can be opened or closed. These transistors are thin-film transistors which are formed, for example, in the selection lines themselves. As a result of this, the selection lines, and thus also the memory elements in the matrix, can be provided with minimum pitch.

REFERENCES:
patent: 4430648 (1984-02-01), Togashi et al.
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 5136540 (1992-08-01), Hayashi et al.
patent: 5144392 (1992-09-01), Brotherton

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