Method of forming a lateral bipolar transistor in a groove

Details Method of forming a lateral bipolar transistor in a groove Method of forming a lateral bipolar transistor in a groove

1985-09-23

1987-11-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG11, 148DIG57, 148DIG87, 156647, 357 35, 357 55, 357 60, 437157, 437225, H01L 2722, H01L 2982, H01L 2996

Patent

active

047047860

ABSTRACT:
A lateral bipolar transistor is described incorporating at least two grooves extending from the upper surface and spaced apart by a predetermined amount from which impurities are introduced to form an emitter region extending from the sidewall of one groove and a collector region extending from the sidewall of an adjacent groove with the base being the substrate material between the two regions. A plurality of grooves may be utilized to form a plurality of transistors with the grooves staggered to facilitate access to the ends of the grooves functioning as emitters and those functioning as collectors. The large vertical junction area formed by the side walls relative to the horizontal junction area at the bottom of the grooves and the uniform base width result in a high current gain lateral transistor.

REFERENCES:
patent: 4100565 (1978-07-01), Khajezadeh et al.
patent: 4131910 (1978-12-01), Hartman et al.
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4250518 (1981-02-01), Bloodworth et al.
patent: 4353086 (1982-10-01), Jaccodine et al.
Roy A. Colclaser, "Microelectronics: Processing and Device Design," Wiley, N.Y., 1980.
Don L. Kendall, "On Etching Very Narrow Grooves in Silicon," Applied Physics Letters, vol. 26, No. 4, 15 Feb. 1975.

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