Fishing – trapping – and vermin destroying
Patent
1986-09-17
1988-05-24
Morgenstern, Norman
Fishing, trapping, and vermin destroying
437238, 437239, 437241, 437243, 427271, 427272, 4274193, 4272553, 4272557, B05D 512, B05D 132, C23C 1600
Patent
active
047466308
ABSTRACT:
A method for producing field oxide in a silicon substrate by forming a thin oxide layer over the surface of the substrate, forming a thin nitride layer over the thin oxide layer, forming a thick oxide over the thin nitride layer, forming a thick nitride layer over the thick oxide layer; patterning all four of the layers to espose the surface of the substrate where the field oxide is to be formed; and growing the field oxide. Preferably, before the field oxide is grown, trenches are formed into the substrate so that the upper surfaces of the field oxide are substantially planar with the upper surfaces of the substrate. The thin oxide layer minimizes bird beak formation, and eases the removal of the oxide
itride/oxide
itride layers. The resultant structure is both planar and bird's beak-free, and is therefore well suited to producing VLSI components having dimensions less than 0.5 microns.
REFERENCES:
patent: 4472459 (1984-09-01), Fisher et al.
patent: 4583281 (1986-04-01), Ghezzo et al.
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"Scaling Limitations of Submicron Local Oxidation Technology", by John Jui, Paul Vande Voorde, and John Moll, IEDM 85; CH2252-5/85/0000-0392; 1985 IEEE.
"Electrical Properties of MOS Devices Made With Silo Technology", by J. Hui, T. U. Chiu, S. Wong, and W. G. Oldham; IEDM 82; CH1832-5/82/0000-0220; 1982 IEEE.
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Hui Chi-Hung
Moll John L.
Voorde Paul V.
Burke Margaret
Hewlett--Packard Company
Hickman Paul L.
Morgenstern Norman
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