Fishing – trapping – and vermin destroying
Patent
1987-05-08
1988-05-24
Ozaki, George T.
Fishing, trapping, and vermin destroying
437133, 437909, H01L 21203
Patent
active
047466260
ABSTRACT:
A heterojunction bipolar transistor having excellent high-frequency characteristics is manufactured by forming a semi-insulating semiconductor layer on a collector (or emitter) layer, removing a part of the semi-insulating semiconductor layer to form a cut portion so that the collector layer is exposed at the cut portion, growing a base layer on the semi-insulating semiconductor layer, on a slant wall of the cut portion and on the exposed part of the collector layer, and growing an emitter (or collector) layer on the base layer. A base layer may be preliminarily formed on the semi-insulating semiconductor layer before forming the cut portion. Energy band gap of the emitter is greater than that of the base.
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Heterostructure Bipolar Transistors and Integrated Circuits, H. Kroemer, Proceedings of the IEEE, vol. 70, No. 1, pp. 13-25, Jan. 1982.
Eda Kazuo
Inada Masanori
Ota Yorito
Matsushita Electric - Industrial Co., Ltd.
Ozaki George T.
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