Method of making bipolar semiconductor device with wall spacer

Details Method of making bipolar semiconductor device with wall spacer Method of making bipolar semiconductor device with wall spacer

1986-01-29

1988-05-24

Saba, William G.

Fishing, trapping, and vermin destroying

156643, 156649, 156653, 156657, 357 34, 357 54, 357 56, 357 91, 437 33, 437 38, 437 69, 437193, 437200, 437228, 437909, 437931, 437956, 437984, H01L 21265, H01L 21283

Patent

active

047466235

ABSTRACT:
A method for fabricating a semiconductor device in which the base resistance is minimized to increase the speed of operation of the device. This is accomplished because the device made by the method makes it possible to form the base and emitter contacts next to each other laterally but spaced vertically.

REFERENCES:
patent: 3730778 (1973-05-01), Shannon et al.
patent: 4330931 (1982-05-01), Liu
Maheux, L., "Transistor for Monolithic Circuits", I.B.M. Tech. Discl. Bull., vol. 11, No. 12, 1969, pp. 1690-1691.

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