Novel integratable Schottky Barrier structure and a method for t

Details Novel integratable Schottky Barrier structure and a method for t Novel integratable Schottky Barrier structure and a method for t

1974-11-01

1976-11-30

Wojciechowicz, Edward J.

357 40, 357 67, 357 71, H01L 2948, H01L 2702, H01L 2348, H01L 2946

Patent

active

039953017

ABSTRACT:
A novel Schottky Barrier structure which is integratable with standard integrated circuits comprising a metal layer of Al.sub.2 Pt in contact with a high resistivity semiconductor region. The structure is fabricated by first forming a platinum silicide layer on said silicon substrate and then applying a metallic layer comprising aluminum on said first layer, after which the structure is sintered at a temperature of at least 400.degree. C. for at least an hour.

REFERENCES:
proc. of IEEE - Aug. 1968 - Lepselter et al. "SB - IGFET".
IBM - Tech. Dis. Bul. - vol. 16, No. 11 - Apr., 1974, Reith et al.

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