Semiconductor laser arrangement and method for the operation the

Details Semiconductor laser arrangement and method for the operation the Semiconductor laser arrangement and method for the operation the

1989-08-07

1990-04-17

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 23, 372 27, 372 97, H01S 319

Patent

active

049187015

ABSTRACT:
A semiconductor laser arrangement is composed of two quasi-index guided laser diodes each with a light intensifying layer arranged in a plane shared by both diodes. The characteristics of the laser diodes are such that one polarization state predominates in one diode, while the other polarization state predominates in the other diode. Any desired degree of polarization dependency of the gain is set by the ratio of the operating currents of the two diodes, so that isotropic amplification can be achieved.

REFERENCES:
patent: 4748630 (1988-05-01), Nagashima
patent: 4794346 (1988-12-01), Miller
Grosskopf et al., publication entitled "Polarization Insensitive Optical Amplifier configurations", p. 2, lines 2 & 3, and p. 5, line 21.
Agrawal publication entitled "Lateral Analysis of Quasi-Index-Guided Injection Lasers: Transition from Gain to Index Guiding", p. 2, lines 26-27.
Amann publication entitled "Polarization Control in Ridge-Waveguide-Laser Diodes", p. 3, lines 1 & 2, p. 4, lines 24 and 25 (FIG. 1).

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