Potential sensor employing electrooptic crystal and potential me

Details Potential sensor employing electrooptic crystal and potential me Potential sensor employing electrooptic crystal and potential me

1995-03-15

1996-08-27

Westin, Edward P.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

359247, 359248, 359252, 359255, 257451, 324 96, 356364, G02F 1015, G01R 3100

Patent

active

055503705

ABSTRACT:
A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10.sup.+1 .OMEGA.cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used. The high-resistance compound semiconductor 12 is also required to have a large electrooptic constant and a resistivity of 10.sup.5 .OMEGA.cm or more.

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