Vertical photoconductive detector

Details Vertical photoconductive detector Vertical photoconductive detector

1988-11-18

1990-04-17

James, Andrew J.

357 16, 357 58, 357 67, H01L 2714, H01L 29161, H01L 2348

Patent

active

049185080

ABSTRACT:
A photoconductive detector comprises a substrate layer of semiconductor material of a first conductivity type substantially transparent of light at the wavelength to be detected and doped sufficiently to provide ohmic contact to the photoconductive active region overlying said substrate layer. The active region comprises a body of undoped semiconductor material absorptive of light at the wavelength to be detected, having first and second major surfaces. The substrate layer serves as a first ohmic contact for the entire first major surface of the active region and a metal or metal alloy serves as a second ohmic contact overlying the entire second major surface of said active region.

REFERENCES:
patent: 4405915 (1983-09-01), Komatsu et al.
patent: 4462019 (1984-07-01), Ewaldt et al.
patent: 4490709 (1984-12-01), Hammond et al.
patent: 4564720 (1986-01-01), Hogan
patent: 4626675 (1986-12-01), Gundner et al.
Agusta et al., "Optical Switching in GaN-Si Switching and Memory Devices", IBM Technical Disclosure Bulletin, vol. 15, No. 7, Dec. 1972.
Lean et al., "Optical Surface Waveguide", IBM Technical Disclosure Bulletin, vol. 15, No. 1, Jun. 1972.
Gammel et al., "A Photoconductive Detector for High-Speed Fiber Communication", IEEE Transactions on Electron Devices, vol. ED-28, No. 7, Jul. 1981, pp. 841-849.
A. Antreasyan et al., "Ga.sub.0.47 In.sub.0.53 As Vertical Photoconductive Detectors with High Gain and Low Bias Voltage", IEEE Transactions on Electron Devices, vol. ED-33, No. 2, Feb. 1986, pp. 188-191.
C. Y. Chen et al., "Interdigitated Al.sub.0.48 In.sub.0.52 As/Ga.sub.0.47 In.sub.0.53 As Photoconductive Detectors", App. Phys. Lett. 44(1), 1 Jan. 1984, pp. 99-101.
C. Y. Chen et al., "High-Speed Junction-Depleted Ga.sub.0.47 In.sub.0.53 As Photoconductive Detectors", Appl. Phys. Lett 46(12), 15 Jun. 1985, pp. 1164-1166.
C. Y. Chen et al., "Reduction of Fall Times in Ga.sub.0.47 In.sub.0.53 As Photoconductive Receivers Through Back Gating", Appl. Phys. Lett 46(3), 1 Feb. 1985, pp. 296-298.
"Vapour-phase Epitaxy of GaInAsP", by G. H. Olsen, published in GaInAsP Alloy Semiconductors, edited by T. P. Pearsall, 1982, John Wiley & Sons Ltd.

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