Semiconductor device

Details Semiconductor device Semiconductor device

1988-04-26

1990-04-17

James, Andrew J.

357 68, 357 56, 357 16, H01L 2714, H01L 3100

Patent

active

049185071

ABSTRACT:
Semiconductor layers having a p-n junction are formed over the surface of a semiconductor substrate except for a partial surface. On the partial surface of the semiconductor substrate, a region of an electrode to be connected with an external terminal is formed with an insulating film interposed between the same. Bonding connection with the external terminal is performed on the region for connection, to reduce mechanical damage of the semiconductor layers having the p-n junction while improving photoelectric conversion efficiency and reliability of the device.

REFERENCES:
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patent: 4286278 (1981-08-01), Lorenze, Jr. et al.
patent: 4377904 (1983-03-01), Chapman et al.
patent: 4525732 (1985-06-01), Bayraktaroglu
patent: 4774205 (1988-09-01), Choi et al.
U.S. Journal: Crystal Research and Technology, vol. 16, No. 9, 1981, pp. 989-994.
U.S. Journal: Appl. Phys. Lett., vol. 32, 1978, pp. 376-378.
"2.times.2-cm.sup.2 GaAs Space Solar Cells with 21% Conversion Efficiency", IEEE 18th Photovoltaic Specialists Conference, 1985, pp. 300-303.
"Reverse Bias and Assembly Tolerance of Liquid Phase Epitaxy GaAs Cells", 22th Intersociety Energy Conversion Eng. Conf., pp. 64-69.

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