Charge detection circuit

Electrical pulse counters – pulse dividers – or shift registers: c – Charge transfer device – Particular input or output means

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377 58, 377 63, 257239, G11C 1928, H01L 2978

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active

052475549

ABSTRACT:
A charge detection circuit includes a p-type semiconductor substrate, a reference voltage source for generating a reference voltage having a predetermined voltage difference with respect to the potential of the semiconductor substrate, a first n.sup.+ -type semiconductor region formed in the semiconductor substrate, for storing a carrier packet, a second n.sup.+ -type semiconductor region formed in the semiconductor substrate and connected to the reference voltage source so as to be kept at a potential substantially equal to the reference potential, an MIS type transfer gate having a channel formed between the first and second semiconductor regions, and a gate electrode insulatively formed over the channel to transfer the carrier packet from the first semiconductor region to the second semiconductor region, a potential detection circuit for detecting the potential of the first semiconductor region, which potential is determined by the amount of carriers in the carrier packet, a signal supply section for supplying a control potential signal to the gate electrode, to control the conduction state of the transfer gate, and a biasing circuit for biasing the potential of the gate electrode according to a preset offset potential. The biasing circuit has a resistor of high resistance connected between the reference voltage source and the gate electrode, to derive the preset offset potential from the reference potential.

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J. Millman--"MicroElectronics"--McGraw-Hill Book Company--1979--pp. 397-400.
Patent Abstracts of Japan, vol. 10, No. 192 (E-417) [2248], 5th Jul. 1985; and JP-A-61 35 560 (Hitachi LTD) Feb. 20, 1986.

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