Superconducting magnetoresistive element having a plurality of w

Details Superconducting magnetoresistive element having a plurality of w Superconducting magnetoresistive element having a plurality of w

1994-09-08

1996-08-27

Dang, Thi

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Measuring or testing system or device

505329, 216 3, H01L 3922

Patent

active

055501010

ABSTRACT:
A superconducting magnetoresistive element has superconducting portions having a high critical current density and weak-coupling portions having a low critical current density. The superconducting portions and weak-coupling portions are alternately arranged and connected in series. The superconducting magnetoresistive element is fabricated, for example, by forming semiconductor films at a plurality of sites on a substrate in a manner that the semiconductor films are spaced from each other, then forming a superconducting thin film all over the substrate and processing the superconducting thin film into a line pattern which passes over the plurality of semiconductor films, and heat-treating the substrate to diffuse a constituent element of the semiconductor films in the superconducting thin film. Portions of the superconducting thin film overlying the semiconductor films become the weak-coupling portions and the rest portions of the superconducting thin film become the superconducting portions.

REFERENCES:
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patent: 5026682 (1991-06-01), Clark et al.
patent: 5162298 (1992-11-01), Chaudhari et al.
Nojima et al., "Improvement in Sensitivity of Novel Magnetic Sensor Using Y-Ba-Cu-O Ceramic Superconductor Film", IEDM, Dec. 1988, pp. 892-893.
Gross et al., "Characteristics of YBa.sub.2 Cu.sub.3 O.sub.7-.delta. Grain Boundary Junction DC-Squids" IEEE Trans. on May. vol. 27, No. 2, Mar. 1991, pp. 2565-2568.
Fundamental Characteristics of a Magnetoresistive Sensor Using Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x Ceramic Superconducting Films to Hideo Nojima et al, IEEE Transactions on Electron Devices, vol. 39, No. 3, Mar. 1992.

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