Infrared emitting device with dislocation free layer

Details Infrared emitting device with dislocation free layer Infrared emitting device with dislocation free layer

1988-06-30

1990-04-17

Mintel, William

357 16, 357 4, H01L 3300

Patent

active

049184962

ABSTRACT:
An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.

REFERENCES:
patent: 4599728 (1986-07-01), Alavi et al.
Levine et al., "InGaAs/InAlAs Multiquantum Well Intersubband, Absorption at a Wavelength of .lambda.=4.4 .mu.m," Appl. Phys. Lett., 52 (18) May 1, 1988, pp. 1481-,1483.
Tsang, "Ga.sub.0.47 In .sub.0.53 As/InP Multiquantum Well Heterostructure Lasers Grown by Molecular Beam Epitaxy Operating at 1.53 .mu.m," Appl. Phys. Lett., 44(3) Feb. 1, 84, 288-90.
Peng et al., "Extremely Low Resistance Nonalloyed Ohmic Contacts on GaAs Using InAs/InGaAs and InAs/GaAs Strained Layer Superlattices," Appl Phys., Lett., 53(10), Sep. 5, 1988, pp. 900-901.
Capasso et al., "New Avalanche Multiplication Phenomenon In Quantum Well Superlattices: Evidence of Impact Ionization Across The Band-Edge Discontinuity," Appl. Phys., Lett. 48(19), May, 12, 1985, pp. 1294-1296.

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