Method for forming micro contacts of semiconductor device

Details Method for forming micro contacts of semiconductor device Method for forming micro contacts of semiconductor device

1995-10-23

1996-08-27

Quach, T. N.

Fishing, trapping, and vermin destroying

437 52, 437193, 437195, 437984, H01L 21283, H01L 21336

Patent

active

055500714

ABSTRACT:
A method for forming micro contacts of a semiconductor device, including the steps of forming a transistor on a semiconductor substrate, forming a pad conductive layer over the resulting structure, forming an insulating film over the resulting structure, thereby planarizing the structure, forming a photoresist film pattern on the planarized structure by use of a contact mask, etching the insulating film using the photoresist film pattern as a mask, thereby partially exposing the pad conductive layer, selectively over-growing the exposed portion of the pad conductive layer, thereby forming a second conductive layer, etching the insulating film using the pad conductive layer as a mask, thereby forming an insulating film pattern, fully etching both the overgrown second conductive layer and the pad conductive layer to a desired depth, filling the etched portions of the conductive layers with another insulating film, thereby planarizing the structure, and forming a bit line on a desired portion of the planarized structure such that the bit line is in contact with the semiconductor substrate. The method according to the present invention can form micro contacts, thereby improving the reliability of the semiconductor device and achieving the high integration of the semiconductor device.

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patent: 5478772 (1995-12-01), Fazan
Kusters, K., et al., "A Stacked Capacitor Cell with a Fully Self-Aligned Contact Process for High-Density Dynamic Random Access Memories", J. Electrochem. Soc. vol. 139, No. 8, Aug. 1992, 2318-2322.

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