Method of programming floating gate memory devices aided by pote

Details Method of programming floating gate memory devices aided by pote Method of programming floating gate memory devices aided by pote

1991-05-31

1993-09-21

Hille, Rolf

Static information storage and retrieval

Floating gate

Particular biasing

365218, 257322, G11C 1134, G11C 700

Patent

active

052474771

ABSTRACT:
Improved methods of programming floating gate memory devices such as MOS EPROMs having a gate, a floating gate, a read channel, and a write or programming channel. Potential is applied to the read channel (which is normally inactive during programming) in order to increase the voltage induced on the floating gate by the programming voltage applied to the gate. This makes it possible to reduce the programming voltage which must be applied to the gate, to reduce the time required to program the device, or to achieve some measure of both of these benefits.

REFERENCES:
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patent: 5022001 (1991-06-01), Kowalski et al.
patent: 5122985 (1992-06-01), Santin
patent: 5132935 (1992-07-01), Ashmore, Jr.
patent: 5150179 (1992-09-01), Gill
B. Eitan et al., "Hot-Electron Injection into the Oxide in n-Channel MOS Devices," IEEE Transactions on Electron Devices, vol. ED-28, No. 3, Mar. 1981, pp. 328-340.

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