Semiconductor laser having a flat groove for selected crystal pl

Details Semiconductor laser having a flat groove for selected crystal pl Semiconductor laser having a flat groove for selected crystal pl

1994-07-27

1996-08-13

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

055464181

ABSTRACT:
A semiconductor laser of the invention includes a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and a semiconductor multilayer structure formed on the substrate. The stripe groove extends along a <1-10> direction. The semiconductor multilayer structure includes an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a surface of an (a11) crystal plane (a>1), the portion being positioned on the stripe groove, a pair of AlGaInP cladding layers provided on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1), and an active layer sandwiched between the pair of AlGaInP cladding layers.

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