Semiconductor memory device with error self-correction system st

Details Semiconductor memory device with error self-correction system st Semiconductor memory device with error self-correction system st

1994-08-02

1996-08-13

Baker, Stephen M.

Excavating

371501, G11C 2900

Patent

active

055464106

ABSTRACT:
A semiconductor memory device has a built-in error correction system for correcting undesirably inverted data bits, and the built-in error correction system starts a parity bit generating sequence and an error correcting sequence only when increase of error rate is forecasted, thereby increasing the access speed without sacrifice of the reliability.

REFERENCES:
patent: 4561095 (1985-12-01), Khan
patent: 4706249 (1987-11-01), Nakagawa et al.
patent: 4768193 (1988-08-01), Takemae
patent: 4993030 (1991-02-01), Krakauer et al.
patent: 5297148 (1994-03-01), Harari et al.
patent: 5359570 (1994-10-01), Hsu et al.
patent: 5455939 (1995-10-01), Rankin et al.

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