Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1992-09-11
1994-07-26
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257758, 257774, 257775, 257638, 257641, 437228, 437235, 437978, H01L 2934, H01L 21465
Patent
active
053329244
ABSTRACT:
A semiconductor device having a superior step coverage of a layer formed inside or near a contact-hole is provided. An intermediate conductive layer is formed through an insulating layer on a lower conductive layer on a semiconductor substrate, and first, second and third inter-layer insulating layers are formed on the intermediate conductive layer. The third inter-layer insulating layer is selectively removed by an isotropic wet etching method thereby to form a through-hole extended to the second inter-layer insulating layer and having a large opening area. In performing this, the second inter-layer insulating layer acts to restrict the removal of the third inter-layer insulating layer in the thickness direction. Next, the first and second inter-layer insulating layers are selectively removed by an anisotropic dry etching method thereby to form a through-hole having a small opening area. The through-hole having a large opening area and the through-hole having a small opening area form a contact-hole. Subsequently, an upper conductive layer is formed on the third inter-layer insulating layer so as to be electrically connected to the lower conductive layer through the contact-hole.
REFERENCES:
patent: 4451326 (1984-05-01), Gwozdz
patent: 5200808 (1993-04-01), Koyama et al.
NEC Corporation
Wojciechowicz Edward
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