Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-04-24
1996-08-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 95, 117106, 117954, 437 20, 437132, C30B 2518
Patent
active
055497497
ABSTRACT:
The invention provides a semiconductor substrate comprising a substrate of a first material and a crystal growth layer formed on the substrate, the crystal growth layer being made of compound semiconductors different from the first material wherein the substrate has a surface diffusion region being heavily doped with one or more elements of the compound semiconductors. A silicon substrate receives an ion-implantation of one or more elements constituting a compound semiconductor different except for silicon at a high impurity concentration for a heat treatment at a higher temperature than a growth temperature of the compound semiconductor and subsequent cooling down to the growth temperature of the compound semiconductor followed by crystal growth of the compound semiconductor on the substrate.
REFERENCES:
patent: 4159214 (1979-06-01), Mason
patent: 4876218 (1989-10-01), Pessa et al.
patent: 4900372 (1990-02-01), Lee et al.
patent: 5011550 (1991-04-01), Konushi et al.
patent: 5141894 (1992-08-01), Bisaro et al.
Kunemund Robert
NEC Corporation
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