Method for manufacturing aluminum wired layer for interconnectin

Details Method for manufacturing aluminum wired layer for interconnectin Method for manufacturing aluminum wired layer for interconnectin

1992-05-14

1994-07-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437197, H01L 2148

Patent

active

053326938

ABSTRACT:
An improved aluminum wired layer for interconnecting a device to another device and which comprises a plurality of aluminum wired layers formed on an insulating layer of a semiconductor device and the method of manufacturing such aluminum wired layer is disclosed. The improvement of the aluminum wired layer comprises a plurality of aluminum wired layers positioned on the insulating layer, with each aluminum wired layer being spaced relative to each other and having a top, side walls and a bottom. A first Al-Ti compound metal layer is formed on the top and on the side walls of each aluminum wired layer to prevent the formation of hillock on the surface of each aluminum wired layer during the heat treatment process and to prevent electromigration phenomenon in each aluminum wired layer when the semiconductor device is in operation.

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Gardner, et al. "Layered and Homogeneous Films of Al and Al/Si with Ti and W for Multilevel Interconnects", IEEE Trans. on Elect. Dev. ED-32(2) (Feb. 1985) pp. 174-183.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, pp. 497, 542-550, 1983.

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