Liquid phase epitaxial process for growing semi-insulating GaAs

Details Liquid phase epitaxial process for growing semi-insulating GaAs Liquid phase epitaxial process for growing semi-insulating GaAs

1974-12-06

1976-11-30

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148171, 148175, 148 15, 148187, 252 623GA, H01L 21208

Patent

active

039947556

ABSTRACT:
Disclosed is a process for fabricating chromium-doped semi-insulating epitaxial layers of gallium arsenide which includes contacting a gallium arsenide substrate with a chromium-doped saturated solution of gallium arsenide in gallium and maintaining the solution at a relatively low liquid phase epitaxial (LPE) deposition temperature on the order of about 750.degree. C-850.degree. C.

REFERENCES:
patent: 3344071 (1967-09-01), Cronin
patent: 3607463 (1971-09-01), Kinoshita et al.
patent: 3623905 (1971-11-01), Akai et al.
patent: 3846191 (1974-11-01), Blum et al.

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