Method of forming a contact

Details Method of forming a contact Method of forming a contact

1993-05-11

1994-07-26

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437200, 148DIG147, H01L 21283

Patent

active

053326911

ABSTRACT:
A method of forming a contact is disclosed. The method of the present invention includes the steps of: forming an insulating layer on a silicon compound; forming a contact hole in the insulating layer, the contact hole reaching the silicon compound; forming at least one layer of a refractory material film on an inner wall of the contact hole and on a surface of the insulating layer; forming a silicon containing tungsten layer on the refractory material film by CVD; and growing tungsten on the silicon containing tungsten layer by CVD, to fill the contact hole with the tungsten wherein the silicon containing tungsten layer contains silicon in the range of 0.6 wt. % to 20 wt. %.

REFERENCES:
patent: 4851295 (1989-07-01), Brors
patent: 5130266 (1992-07-01), Huang et al.
"Simplified Production Process of WSi.sub.2 by CVD," IBM Technical Disclosure Bulletin, vol. 31, No. 6, Nov. 1988, pp. 308-309.
Yamazaki et al: Advanced Metallization for ULSI Applications, Materials Research Society, 1992, pp. 299-304, "CVD-WSi.sub..chi. Barrier Technology for Blanket W Contact Filling".

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