Fishing – trapping – and vermin destroying
Patent
1992-06-29
1994-07-26
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 60, 437919, H01L 2170, H01L 2700
Patent
active
053326849
ABSTRACT:
A method for fabricating a thin-film capacitor for a semiconductor integrated circuit device includes steps of forming a barrier metal layer, forming a dielectric film, forming an interlayer insulating film, exposing the dielectric film and forming an upper electrode. The thin-film capacitor is fabricated by successively depositing the dielectric film and the upper electrode on a lower electrode. The dielectric film is made of a material having a high permittivity such as SrTiO.sub.3. The interlayer insulating film is left at side portions of the lower electrode and the dielectric film. In one aspect of the invention, even if the high permittivity film becomes thin at the side and end portions of the lower electrode, the interlayer insulating film can suppress an increase in a leakage current. In another aspect of the invention, the high permittivity film and lower electrode may be etched successively and collectively and an upper electrode is deposited thereon. It is possible to suppress an occurrence of short-circuiting of the electrodes and an increase in the leakage current at the side portions of the high permittivity film.
REFERENCES:
patent: 5079670 (1992-01-01), Tigelaar
"3-Dimensional Stacked Capacitor Cell for 16M and 64M Drams", International Electron Devices Meeting Digest of Technical Papers, 1988; pp. 592-595, by T. Ema, et al.
"High-Perforamnce Tantalum Oxide Capacitors Fabricated By A Novel Reoxidation Scheme", by S. Gi Byeon et al., IEEE Transactions On Electron Devices, vol. 37, No. 4, Apr. 1990, New York, US, pp. 972-979.
Miyasaka Yoichi
Sakuma Toshiyuki
Yamamichi Shintaro
Chaudhuri Olik
NEC Corporation
Tsai H. Jey
LandOfFree
Method for fabricating thin-film capacitor with restrained leaka does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating thin-film capacitor with restrained leaka, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating thin-film capacitor with restrained leaka will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1052846