Local encroachment reduction

Fishing – trapping – and vermin destroying

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437 47, 437 48, 437 52, 437 69, H01L 21265

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active

053326822

ABSTRACT:
Local Encroachment Reduction (LER) is described, in which a fraction of field oxide is selectively etched. A high energy boron implant is used to maintain adequate active area isolation after the removal. This implant also doubles as a LER high capacitance and provides a carrier to minority substrate electrons. After the high energy boron implant, an N-type bottom plate capacitor is implanted. At that point, the wafer is completed by existing techniques.

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