Semiconductor device mounted on a heat sink with an intervening

Details Semiconductor device mounted on a heat sink with an intervening Semiconductor device mounted on a heat sink with an intervening

1991-02-01

1993-09-21

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With provision for cooling the housing or its contents

257729, 257717, 361705, H01L 2302

Patent

active

052472035

ABSTRACT:
A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element includes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.

REFERENCES:
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patent: 4947238 (1990-08-01), Ishii et al.
patent: 5031029 (1991-07-01), Acocella
patent: 5134018 (1992-07-01), Tokunaga
Davey et al., "Heat Sinks For GaAs Integrated Circuits By Heterostructures", Navy Technical Disclosure Bulletin, vol. 7, No. 3, Mar. 1982, pp. 25-29.
Comerford, "Flip-Chip Bonding By Solder Filling of Capillaries", IBM Technical Disclosure Bulletin, vol. 23, No. 5, Oct. 1980, pp. 2146-2147.
Seiwa et al., "High Power CW . . . Junction Down Mounting ", Journal of Applied Physics, vol. 61, No. 1, 1987, pp. 440-442.
"Mitsubishi Denki GIHO", vol. 60, No. 12, 1986, pp. 27-31.

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