PECVD (plasma enhanced chemical vapor deposition) method for dep

Details PECVD (plasma enhanced chemical vapor deposition) method for dep PECVD (plasma enhanced chemical vapor deposition) method for dep

1988-09-01

1990-04-17

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437187, 437189, 437192, 437200, 427 38, 427 39, 20419212, 20419215, 148DIG147, H01L 2100, H01L 2102, H01L 21285, H01L 2188

Patent

active

049180339

ABSTRACT:
The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers.
In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.

REFERENCES:
patent: 4138512 (1979-02-01), Glaski
patent: 4517225 (1985-05-01), Broadbent
patent: 4617087 (1986-10-01), Iyer
Zarowin, C., IBM Technical Disclosure Bulletin, vol. 21, No. 9, Feb. 1979, p. 3832, Room Temperature, Plasma Chemical Transport Deposit. of Metal (Gold) Films.
Gorowitz, B., Application of Plasma Enhanced Chemical Vapor Deposit. in VLSI, Sol. Stat. Tech., Jun. 1985, pp. 197-203.
Sze, S., VLSI Technology, Chap. 3, pp. 93-94, McGraw-Hill, 1983.
Schmitz, J., Comparison of Step Coverage and Other Aspects of the H.sub.2 /WF.sub.6 SiH.sub.4 /WF.sub.6 Reduction Schemes Used in Blanket LPCVD of Tungsten, Electrochem. Soc., vol. 87-88, Oct. 1987.
Akitmoto, K., Formation of W.sub.x Si.sub.1-x by Plasma Chemical Vapor Deposition, Appl. Phys. Lett. 39(5), Sep. 1, 1981.
Brors, D., Low Pressure Chem. Vapor Deposit. of Tungsten Silicide, pp. 82-85, Semicond. Internat., May 1984.
Horwitz, C., Hollow Cathode Reactive Sputter Etching-A New High-Rate Process, pp. 977-979, Appl. Phys. Lett. 43(10), Nov. 15, 1983.
Bartha, J., In Situ Determin. of Growth Rate and Stoichiometry in a Heterogen. CVD Reactor, IBM Tech. Dis. Bulletin, vol. 29, No. 11, Apr. 1987, p. 4851.

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