Reference potential generating circuit and semiconductor integra

Details Reference potential generating circuit and semiconductor integra Reference potential generating circuit and semiconductor integra

1993-06-09

1996-08-13

Wong, Peter S.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323314, 323907, G05F 322

Patent

active

055459773

ABSTRACT:
In a circuit, a resistance element is interposed between a positive power supply line (external power supply voltage level VCC) and an output node. To feedback an output potential, there is disposed an N-type MOSFET of which gate is connected to the output node and of which source is connected to the earth line (earth potential VSS) in the circuit. Another three N-type MOSFETs which are so connected in series to one another as to form a MOS diode, are interposed between the drain of the feedback N-type MOSFET and the output node. The earth line also serves as a reference potential line for the potential of the output node. Variations of the threshold voltages of the MOSFETs due to temperature variations are compensated. This restrains the output potential from varying.

REFERENCES:
patent: 4295089 (1981-10-01), Cooperman
patent: 4313083 (1982-01-01), Gilbert et al.
patent: 5173656 (1992-12-01), Seevinck et al.
patent: 5239256 (1993-08-01), Yoshida
patent: 5384740 (1995-01-01), Etoh et al.

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