Solid state image sensor having high charge transfer efficiency

Details Solid state image sensor having high charge transfer efficiency Solid state image sensor having high charge transfer efficiency

1991-11-26

1993-01-19

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

377 58, 257233, H01L 2978, G11C 1928

Patent

active

051810930

ABSTRACT:
A solid state image sensor comprises a p-type semiconductor region, an n-type photoelectric conversion region formed in a surface region of the semiconductor region, an n-type charge transfer region formed in the surface of the semiconductor region separately from the photoelectric conversion region, and an electric charge read-out gate region formed between the photoelectric conversion region and the charge transfer region. A p.sup.+ thin surface layer region if formed to cover a surface of the photoelectric conversion region excluding an end portion adjacent to the electric charge read-out gate region. A gate electrode is formed above the electric charge read-out gate region. The end portion of the photoelectric conversion region not covered by the thin surface layer region, has a short length sufficient to make a potential well formed in the portion shallow under influence of potentials of the p.sup.+ thin surface layer region and the electric charge read-out gate region. Preferably, this end portion of the photoelectric conversion region is formed of a surface region having a low impurity concentration.

REFERENCES:
patent: 5043783 (1991-08-01), Matsumoto et al.
patent: 5049960 (1991-09-01), Miwada

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