Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1995-07-03
1996-08-13
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257773, 257649, 257760, H01L 2358
Patent
active
055459196
ABSTRACT:
Metal wires are formed side by side over a semiconductor substrate, with an interlayer insulating film interposed between the metal interconnections and the semiconductor substrate. The metal interconnections are covered with a passivation film composed of a lower silicon oxide film and an upper silicon nitride film. The silicon oxide film is deposited so that the maximum thickness of the portions of the silicon oxide film on the side faces of the metal interconnections is less than half of the minimum space between the metal interconnections. The silicon nitride film is deposited so as to be interposed between the portions of the silicon oxide film on the side faces of the adjacent metal interconnections.
Ueda Satoshi
Ueda Tetsuya
Yamano Atsuhiro
Yano Kousaku
Guay John
Jackson Jerome
Matsushita Electric - Industrial Co., Ltd.
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