Process for depositing a silicon-containing polycrystalline film

Details Process for depositing a silicon-containing polycrystalline film Process for depositing a silicon-containing polycrystalline film

1992-06-26

1993-09-21

Fourson, George

Fishing, trapping, and vermin destroying

437233, 437109, 437111, 437965, 437967, 437131, H01L 21465

Patent

active

052468860

ABSTRACT:
A process for forming a silicon-containing polycrystalline film on a substrate by a chemical vapor deposition method, said process comprises the steps of:

REFERENCES:
patent: 4477311 (1984-10-01), Mimura et al.
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4885258 (1989-12-01), Ishihara et al.
patent: 4992134 (1991-02-01), Gupta et al.
J. Electrochemical Soc., vol. 130, No. 7, pp. 1571-1580, Jul. 1983, Jastrzebski et al., "Growth Process of Silicon Over SiO2 by CVD etc.".

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