Method of forming nanometer-scale trenches and holes

Details Method of forming nanometer-scale trenches and holes Method of forming nanometer-scale trenches and holes

1991-10-24

1993-09-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437192, 437201, 437245, H01L 2144

Patent

active

052468798

ABSTRACT:
Nanometer thick metallic layers are fabricated on trenches or holes (espelly vias) within a substrate by depositing, by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, a metallic layer on a substrate surface on which one or more trenches or holes are formed. The metallic layer thus formed has an extremely small grain size, which permits the attainment of very high spatial resolution and thus permits the formation of extremely small trenches and holes, increasing the attainable memory/circuit density. This invention is useful in the fabrication of ultra-high density trench capacitors and ULSI microelectronic circuits.

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