Method of repairing indentations in phase-shifting lithographic

Details Method of repairing indentations in phase-shifting lithographic Method of repairing indentations in phase-shifting lithographic

1991-09-20

1993-09-21

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 4, 430322, G03F 900

Patent

active

052468011

ABSTRACT:
A phase-shifting mask, having plateau and trench surfaces located on a major surface of the mask, has a defect in the form of an indentation region located on a plateau (or trench) surface. The mask is repaired with respect to the defect by spinning on the major surface of the mask a planarization layer for which dry-etching conditions exist at which this planarization layer anisotropically etches at the same rate as that of the mask substrate material--e.g., quartz. Then the portion of the planarization layer overlying the defect is dry-etched under those conditions, using in one embodiment a patterned protective masking layer, such as chrome, having an aperture overlying the defect. This aperture need not be precisely laterally aligned with the defect (unless the defect extends to an edge of the plateau surface). The etching is continued until it reaches a depth H beneath the level of the plateau (or trench) surface that is equivalent to a phase shift of 2n .pi. radian, where n is an integer (preferably unity).

REFERENCES:
patent: 4906326 (1990-03-01), Amemiya et al.
patent: 5085957 (1992-02-01), Hosono
Hasegawa, N. et al, "Submicron Photolithography Using Phase-Shifting Mask," Fourth Hoya Photomask Symposium, Japan.

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