Method of making TFT with anodic oxidation process using positiv

Details Method of making TFT with anodic oxidation process using positiv Method of making TFT with anodic oxidation process using positiv

1993-04-06

1996-08-13

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437174, 437170, 437172, 205 91, 205106, 205324, H01L 2184

Patent

active

055455719

ABSTRACT:
An improved method for manufacturing an insulated gate field effect transistor is described. The method comprises the steps of forming a semiconductor film on an insulating substrate, forming a gate insulating film on said semiconductor film, forming a gate electrode on said gate insulating film with said gate insulating film inbetween, anoding said gate electrode in order to coat an external surface of said gate electrode with an oxide film thereof and applying a negative or positive voltage to said gate electrode with respect to said semiconductor film. Lattice defects and interfacial states caused by the application of a positive voltage during the anoding are effectively eliminated by the negative voltage application.

REFERENCES:
patent: 3862017 (1975-01-01), Tsunemitsu et al.
patent: 5132200 (1992-07-01), Fukuda et al.
patent: 5202274 (1993-04-01), Bae et al.
patent: 5308998 (1994-05-01), Yamazaki et al.

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